UnitedSiC added two TO220-3L package options to its range of hard-switching UF3C FAST 650V SiC FETs. The devices offer RDS(on) values of 30mohms (UF3C065030T3S) and 80mohms, in a three-leaded TO220-3L package with enhanced thermal characteristics. Both SiC FET products are based on a ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
The device’s standard gate-drive characteristics allows a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices on existing designs in which designers can expect a performance increase with lower conduction and switching losses, enhanced thermal properties and integrated gate ESD protection. In advanced designs the SiC FETs deliver increased switching frequencies for system benefits in both efficiency and energy density.
Offering a very low gate charge and improved reverse-recovery characteristics, the devices are well suited for switching inductive loads when used with recommended RC-snubbers, and any application requiring a standard gate drive. The UnitedSiC UF3C FAST SiC Series is available in a range of TO247-3L, TO247-4L, TO220-3L and D2PAK7-3L packages, with four 1200V and ten 650V options.
Learn more at www.unitedsic.com/cascodes.