MagnaChip Semiconductor now offers 0.35 micron 700V Ultra-High Voltage process technologies (UHV) suitable for different system requirements for AC-DC converter ICs and LED driver ICs. MagnaChip has successfully reduced device sizes of UHV nLDMOS by 30% and JFET by 50% from its previous generation. To cover various requirements, MagnaChip offers multiple UHV technologies in terms of gate oxide schemes. When high system integration is necessary, dual gate oxide UHV technology can be used that provides the optimized low voltage, high voltage, and ultra-high voltage devices. When manufacturing cost is important and control logic device density is high, low-voltage single-gate oxide UHV technology can be used. When manufacturing cost is important and superior high-voltage performance to drive external discrete high voltage MOSFETs is necessary, high voltage single-gate oxide UHV technology can be used.
UHV devices with operation voltages from 350V to 700V are provided, and additional option devices can integrated AC-DC converter ICs and LED driver ICs that are 700V nLDMOS integrated with 700V JFET, Zener diode, 700V resistor, thin film resistor, MIM capacitance and fuse. YJ Kim, MagnaChip’s Chief Executive Officer, commented, “UHV technology is a key technology we are focused on as market demands for LED lighting and AC-DC converters remain to be strong.” Mr. Kim added, “We are continuing to develop additional UHV technologies to improve performances and cover more system requirements.”
More information is available at www.magnachip.com.