MagnaChip’s Third Generation 0.18-Micron Bipolar-CMOS-DMOS Process Technology Hits the Market

December 28, 2018 Laura Dolan

San Jose, CA - MagnaChip Semiconductor Corporation offers its third generation 0.18-micron Bipolar-CMOS-DMOS (BCD) process technology to its foundry customers.

The technology is conducive for PMIC, DC-DC converters, battery charger ICs, protection ICs, motor driver ICs, LED driver ICs and audio amplifiers. The third generation 0.18-micron BCD process technology provides improved specific on-resistance (Rsp) of power Laterally Diffused Metal Oxide Semiconductor (LDMOS) that operates up to 40V with streamlined manufacturing.

The purpose of the third generation BCD process technology is to provide a variety of optional devices to improve integration and flexibility of design. The optional devices include a high-performance bipolar transistor, Zener diode, high resistance poly resistor sans additional photo layer, tantalum nitride resistor with low temperature coefficient, metal-insulator-metal capacitor, metal-oxide-metal capacitor, electrical fuse, and multi-time programmable memory.

“Our third generation 0.18-micron BCD process technology with low specific on-resistance is highly suitable for many power IC applications because it helps reduce chip size and improve power efficiency,” said YJ Kim, MagnaChip’s CEO. “And we will continue to improve the performance of our BCD technology, as it will help our customers increase the competitiveness of their products.”

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