Infineon Releases CoolSiC™ MOSFET 1700 V SMD

June 1, 2020 Perry Cohen

Infineon Technologies announced it is adding to is CoolSiC™ MOSFET portfolio by offering a 1700 voltage class with its trench semiconductor technology. The company previously added a 650V to its portfolio earlier this year.

The 1700V surface-mounted device (SMD) has physical characteristics of silicon carbide (SiC), which offers low switching and conduction losses. According to the company, it targets auxiliary power supplies in three-phase conversion systems such as motor drives, renewables, charging infrastructure, and HVDC systems.

In cases when low-power applications operate below 100W, many designers prefer single-ended flyback topology. The topology in the CoolSiC MOSFETs 1700 V in SMD package is enabled for DC-link connected auxiliary circuits up to 1000 V DC input voltage.

Additionally, its blocking voltage eliminates concerns of overvoltage margin and reliability of power supplies. It features low device capacitances and gate charges for transistors of the voltage class.

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About the Author

Perry Cohen

Perry Cohen, associate editor for Embedded Computing Design, is responsible for web content editing and creation in addition to podcast production. He also assists with the publication’s social media efforts which include strategic posting, follower engagement, and social media analysis. Before joining the ECD editorial team, Perry has been published on both local and national news platforms including (Phoenix), (Phoenix),, Cronkite News, and MLB/MiLB among others. Perry received a BA in Journalism from the Walter Cronkite School of Journalism and Mass Communications at Arizona State university. He can be reached by email at <a href=""></a>. Follow Perry’s work and ECD content on his twitter account @pcohen21.

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