Vishay Releases Siliconix SiZ240DT, MOSFET Half Bridge Power Stage

October 22, 2020 Perry Cohen

Vishay released the Siliconix SiZ240DT, a 40 V n-channel MOSFET half bridge power stage. It integrates high side and low side MOSFETs in a compact PowerPAIR 3.3mm x 3.3mm package, providing on-resistance and on-resistance times gate charge.

The two TrenchFET® MOSFETs in the SiZ240DT are internally connected in a half-bridge configuration. Its Channel 1 MOSFET provides on-resistance of 8.05 mΩ at 10 V and 12.25 mΩ at 4.5 V. The Channel 2 MOSFET features on-resistance of 8.41 mΩ at 10 V and 13.30 mΩ at 4.5 V.

It provides designers with half-bridge power stages for synchronous buck DC/DC converters, wireless chargers, and switch-mode power supplies in telecom equipment and servers.

It additionally features a wire-free internal construction, minimizing parasitic inductance to allow for high frequency switching. The Qgd / Qgs ratio reduces noise to enhance switching characteristics.

For more information, visit http://www.vishay.com/.

About the Author

Perry Cohen

Perry Cohen, associate editor for Embedded Computing Design, is responsible for web content editing and creation in addition to podcast production. He also assists with the publication’s social media efforts which include strategic posting, follower engagement, and social media analysis. Before joining the ECD editorial team, Perry has been published on both local and national news platforms including KTAR.com (Phoenix), ArizonaSports.com (Phoenix), AZFamily.com, Cronkite News, and MLB/MiLB among others. Perry received a BA in Journalism from the Walter Cronkite School of Journalism and Mass Communications at Arizona State university. He can be reached by email at <a href="mailto:perry.cohen@opensysmedia.com">perry.cohen@opensysmedia.com</a>. Follow Perry’s work and ECD content on his twitter account @pcohen21.

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