If you have plans to design in a Qualcomm 9205 LTE modem, you may want to take notice of Winbond Electronics’ latest flash memory device, the QspiNAND. It’s the company’s first 1.8V, 512-Mbits part, which hits the sweet spot for cellular NB-IoT module designers, serving automotive and IoT. Current draw is 25 mA active, 10 μA standby, and 1 μA in deep power-down mode.
The device gives developers the flexibility to expand their memory options with minimal additional cost. This is achieved by using the same 6-pin signals and QSPI command-set for SLC NAND flash densities without any performance reduction, taking advantage of the part’s continuous read feature, which occurs at 104 MHz. This feature allows for efficient access to the entire memory array with one read command, which is often used in code shadowing applications.
W25N QspiNAND flash devices are offered in 8-pin, 6x8mm packages, which was not the case in the past for typical SLC NAND memory. Hence, an overall board-size reduction can be achieved. The W25N512GW’s memory array is organized into 32,768 programmable pages of 2112 bytes each.
To maximize system performance, bad block management can be handled on-chip. Clock speeds of 104 MHz allow equivalent 416-MHz speed (104 MHz times four) when using the fast-read dual/quad I/O instructions.
The industrial grade part operates from -40°C to +85°C, while the industrial-plus and automotive devices can handle -40°C to +105°C. Availability is immediate.
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