It shouldn't come as much of a surprise that GaN Systems, one of the leader in GaN power semiconductors, released a Gallium-Nitride power transistor, the GS-065-120-1-D. It’s a 120-A, 650-V GaN E-HEMT device. Such a part is suited for high-power applications like automotive, industrial, and renewable energy.
The new power transistor increases the power density to 500 kW, needed for power conversion systems, including automotive traction inverters, very high power on-board chargers (OBC), large-scale energy storage systems, and industrial motor drives. This transistor, with twice the current capability of the company’s previous part, lets designers effectively double the power processing for the same volume. GaN Systems claims that it’s the lowest RDS(on), highest current 650-V GaN HEMT available today.
The GS-065-120-1-D is sold as a die to customers building modules. Hence, it can be used in half-bridge, full-bridge, and six pack module topologies.
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