WIN Enterprises Announces Fanless Embedded Computer with 6th/7th Generation Intel Core and 6x USB for IoT Data & Video Storage

August 21, 2019 WIN Enterprises

August 20, 2019 WIN Enterprises, Inc., a leading designer and manufacturer of custom solutions for OEMs, announces the PL-50010. The compact device is an aluminum extrusion and steel constructed fanless embedded PC featuring a 7th/6th Gen Intel Core i7/i5/i3 processor. It feature two 260-pin SODIMM dual-channel DDR4 1866/2133MHz supporting up to 32GB of memory. One 2.5" SATA 3.0 HDD drive bay is provided by the device along with a one half-size Mini PCIe socket. The unit has a IP40 rating and measures just 115mm (W) x 48.7 mm (H) x 111 mm (D). The PL-50010 has 2x USB 2.0 and 4x USB 3.0 COM ports to provide serial connections for gathering and storing factory-line information or fulfilling similar storage applications where lots of data are generated. USB 2.0, although slower that the newer 3.0 (by 10 x’s), can be used to augment a factory-based IoT architecture by capturing external video of manufacturing processes. Video and numeric data can then be shared with an edge server for diagnostics and forwarding to the Cloud for storage and further analysis.


Data Display capabilities include 2x HDMI (dual HDMI displays) and audio (1x line-out; 1x mic-in). A 12v DC-in (DC jack) powers the unit. LAN connections include 2x GbE for corporate or edge networking to the Cloud. Certifications include CE, FCC Class A, RoHS, UL/cUL.



Supports 1x Mini PCIe

1x M.2 slots

Rich I/O connectivity with 2x GbE LAN, 4x USB 3.0, 2x USB 2.0

1x 2.5" SATA 3.0 drive bay

HDMI provides up to 4096x2304p @ 24Hz resolution

Compact size: 115mm (W) x 48.7 mm (H) x 111 mm (D); 4.5” (W) x 1.9” (D) x 4.8” (D)

Supports DDR4 SODIMM up to 32GB

Wi-Fi capable

Previous Article
Everspin and Phison Partner to Bring Spin Torque Transfer MRAM to Next Generation Enterprise SSD Controllers

Everspin's STT-MRAM now part of Phison SSD Controllers.

Next Article
Micron Launches Highest-Capacity Monolithic Memory for Mobile Applications

Mass production of LPDDR4X Moves to 1z nm DRAM process node.