Renesas Releases 28 nm Flash Memory Technology

June 12, 2019 Laura Dolan

Renesas’ new flash memory technology uses the next-generation 28nm process to gain larger memory capacities, higher readout speeds, and over-the-air (OTA) support for automotive microcontrollers (MCUs).

The new flash memory technology features:

  • 24 MB on-chip flash memory
  • 240 MHz random access read speed
  • Development of noise-reducing technology
  • OTA capable of control software switching that is both robust and fast

For more information, visit renesas.com.

Previous Article
Everspin 1 Gb STT-MRAM with DDR4 Interfaces Now in Pilot Production
Everspin 1 Gb STT-MRAM with DDR4 Interfaces Now in Pilot Production

The 1 Gb STT-MRAM devices will be available with 8- or 16-bit DDR4-compatible interfaces and designed into ...

Next Article
Memory Card Standards Migrate Toward High Speed PCI Express

These standards with PCI Express interfaces give the two memory card standards a new life and opportunity i...