Intermolecular Develops Four-Element ALD Chalcogenide-based OTS for 3D Memory Arrays

June 19, 2020 Rich Nass

Intermolecular, a wholly-owned subsidiary of Germany-based Merck KGaA, recently announced an atomic layer deposition (ALD) GeAsSeTe (Germanium, Arsenic, Selenium, Tellurium) ovonic threshold switch (OTS) for 3D vertical memory arrays. The company claims that it’s the first of its kind.

This material combination enables a 3D vertical non-volatile memory architecture for high density, high performance applications, including AI, gaming, and data centers. Previously, it was challenging to build such architectures because of the inability to stack tens of layers in a 3D structure. This limited memory density and increased the costs involved.

OTS devices are commonly used as selector elements in 3D crosspoint memory arrays. They were limited to that crosspoint architecture due to the absence of conformality of physical vapor deposition (PVD) deposited chalcogenide films. The GeAsSeTe OTS device for 3D vertical memory arrays deliver excellent endurance at 1 billion cycles, fast switching and low threshold voltage (VTH) drift. The introduction of the As element in a four-element ALD film allows for excellent thermal stability and for the device to operate at high temperatures. 

About the Author

Rich Nass

Richard Nass is the Executive Vice-President of OpenSystems Media. His key responsibilities include setting the direction for all aspects of OpenSystems Media’s Embedded and IoT product portfolios, including web sites, e-newsletters, print and digital magazines, and various other digital and print activities. He was instrumental in developing the company's on-line educational portal, Embedded University. Previously, Nass was the Brand Director for UBM’s award-winning Design News property. Prior to that, he led the content team for UBM Canon’s Medical Devices Group, as well all custom properties and events in the U.S., Europe, and Asia. Nass has been in the engineering OEM industry for more than 25 years. In prior stints, he led the Content Team at EE Times, handling the Embedded and Custom groups and the TechOnline DesignLine network of design engineering web sites. Nass holds a BSEE degree from the New Jersey Institute of Technology.

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