ROHM’s Latest 4-Pin SiC MOSFETs Tout Lower Switching Losses

October 9, 2019 Alix Paultre

ROHM announced the availability of six 650V/1200V trench gate structure SiC MOSFETs, the SCT3xxx xR-Series, targeting server power supplies, UPS systems, solar power inverters, and EV charging stations. The devices have a 4-pin TO-247-4L package to reduce switching loss by up to 35 percent over conventional 3-pin TO-247N packages. Adopting the 4-pin TO-247-4L package separates the driver and power source pins, minimizing the effects of the parasitic inductance component.

For application evaluation, a SiC MOSFET evaluation board, P02SCT3040KR-EVK-001, is available, equipped with gate driver ICs (BM6101FV-C) as well as multiple power supply ICs and discrete components optimized for SiC device drive. Compatibility with both the TO-247-4L and TO-247N package types enable evaluation of both packages under the same conditions. The board can be used for double pulse testing as well as the evaluation of components in boost circuits, 2-level inverters and synchronous rectification buck circuits.

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