The Ferdinand-Braun-Institut (FBH) recently announced a breakthrough with transistors based on gallium oxide (ß-Ga2O3). The ß-Ga2O3-MOSFETs provide a high breakdown voltage as well as high current conductivity, while offering a breakdown voltage of 1.8 kilovolts and a power figure of merit of 155 megawatts per square centimeter. Breakdown field strengths achieved are significantly higher than current wide-bandgap semiconductors.
The FBH team tackled the layer structure and gate topology, using substrates from the Leibniz Institute for Crystal Growth, with an optimized epitaxial layer structure. This reduces defect density while improving electrical properties, leading to lower on-state resistances. The gate’s topology has been further optimized to reduce high field strengths at the gate edge, leading to higher breakdown voltages.
Learn more at www.fbh-berlin.com.
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