Qorvo’s QPA2308 60W GaN Power Amplifier for Commercial and Military Apps Now at Mouser

July 31, 2019 Alix Paultre

Mouser Electronics is now stocking the QPA2308 MMIC power amplifier from Qorvo. Engineered for commercial and military applications, the QPA2308 provides high power-density and efficiency for 5 to 6 GHz radio frequency (RF)-based designs. Using a 0.25-μm gallium nitride-on-silicon carbide (GaN-on-SiC) process, the monolithic microwave integrated circuit (MIMC) power amplifier is provided in a 15.24 × 15.24 mm bolt-down package.

The QPA2308 power amplifier features greater than 60 W of saturated output power, and over 21 dB of large-signal gain. The device’s power-added efficiency (PAE) is rated at greater than 47 percent, and the RF output power where the device starts to draw positive gate current (PSAT) is measured at 48 dBm. Input return loss for the amplifier is specified at 14 to 23 dB, while the output return loss is 13 dB. To simplify system integration, the QPA2308 also supplies two RF ports that are fully matched to 50 ohms, each integrated with DC blocking capacitors.

The operating temperature range is from -40° to +85°C, with a power dissipation of 140 W at 85°C. The RoHS-compliant amplifier suits RF applications such as C-Band Radars, satellite (Satcom) and space communications, and electronic warfare technologies. The QPA2308EVB1 evaluation board is made from Rogers RO6035HTC dielectric, a high-reliability material used specifically in aerospace and defense-based projects.

Learn more at www.mouser.com/qorvo-qpa2308-mmic.

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