MagnaChip IGBTs support 1200V, 100A for high-voltage industrial power conversion

November 26, 2018 Brandon Lewis

SEOUL. MagnaChip has commenced volume production on its P-series Insulated Gate Bipolar Transistors (IGBT) power modules, the MBW100T120PHF, which target high-voltage industrial applications. IGBT P-series devices support high current and high voltage capabilities of 1200 V and 100 A, and are operable at up to four times the rated current.

Thanks to Field-Stop Trench technology, MBW100T120PHF devices support saturation voltages (Vce(sat)) as low as 1.71 V. Field-Stop Trench technology also reduces switching losses and allows designers to improve switching frequency, which means smaller, less expensive capacitors and inductors can be used in circuits.

Optimized resistance within P-series IGBT MBW100T120PHF devices enables a parallel structure design, allowing multiple chips to operate simultaneously.

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About the Author

Brandon Lewis

Brandon Lewis, Editor-in-Chief of Embedded Computing Design, is responsible for guiding the property's content strategy, editorial direction, and engineering community engagement, which includes IoT Design, Automotive Embedded Systems, the Power Page, Industrial AI & Machine Learning, and other publications. As an experienced technical journalist, editor, and reporter with an aptitude for identifying key technologies, products, and market trends in the embedded technology sector, he enjoys covering topics that range from development kits and tools to cyber security and technology business models. Brandon received a BA in English Literature from Arizona State University, where he graduated cum laude. He can be reached by email at

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