Infineon Technologies launched additional members of its CoolSiC MOSFET family to address a wide range of applications, such as server, telecom and industrial SMPS, solar energy systems, energy storage and battery formation, UPS, motor drives, and EV-charging. The CoolSiC MOSFET 650 V devices are rated from 27 mΩ to 107 mΩ, and are available in classic TO-247 3-pin as well as TO-247 4-pin packages. To ease the application design using CoolSiC MOSFETs, Infineon offers dedicated 1-channel and 2-channel galvanically isolated EiceDRIVER gate-driver ICs.
Based on Infineon’s trench semiconductor technology and maximizing the characteristics of SiC, the devices offer a high transconductance level (gain), a threshold voltage of 4V, and short-circuit robustness. A low on-state resistance (R DS(on)) and robust and stable body diodes with a low level of reverse recovery charge (Q rr), and commutation robustness helps in achieving an overall system efficiency of 98 percent, along with continuous conduction-mode totem-pole power factor correction (PFC).