GaN Systems will demonstrate the 650 V, 150 A GaN power transistor, presented as the industry’s highest-current device of its type, at PCIM Europe in Nuremberg, Germany on May 7-9, 2019 at Booth 9-507. The GS-065-150 device has 100 times lower switching losses than comparable IGBTs – that’s two orders of magnitude less, a 99 percent reduction in switching losses.
Recently-introduced products at the booth will include the GS-065 low current (3.5A to 11A) transistor line with EZDrive circuit compatibility, which eliminates the need for a discrete driver. Reference tools to be shown include a 50 W wireless power amplifier, an evaluation board for wireless power transfer and charging applications, 1.5 kW and 3 kW Bridgeless Totem Pole PFC reference designs using GaN Systems 650 V power transistors, and Insulated Metal Substrate (IMS) half-bridge thermal mounting solutions, which provide design flexibility and scalability with three power level configurations of 1.5 kW, 3 kW, and 6 kW.
Learn more at www.gansystems.com.