Leti, an institute of CEA, and CEA-IRIG, a research institute, have created the first quantum integrated circuit with quantum dots on a CMOS chip. The chip, fabricated on 28nm FD-SOI process, integrates analog and digital functions (multiplexer, buffer, signal amplifier, oscillator, level converter).
The research also demonstrates CEA-Leti’s know-how in cryogenic instrumentation in FD-SOI technology, and can also be used for other non-silicon quantum devices such as superconducting qubits. Loïck Le Guevel, a lead author of the paper, explained that the quantum integrated circuit is a proof-of-concept circuit merging microelectronics benchmarks and quantum dots operating at sub-Kelvin temperature within a limited power budget.
The quantum silicon device uses all elements required to properly design advanced circuits, and shows that FD-SOI could one day allow circuit designers to use qubit arrays embedded in IP blocks with classic electronics, to build custom-made, large-scale quantum silicon processors.