Everspin Achieves Data Center OEM qualification of its 1Gb STT-MRAM Solution

December 12, 2019 Tiera Oliver

Everspin Technologies Inc., a developer and manufacturer of Magnetoresistive RAM (MRAM), announced receiving the qualification notice from an OEM server of its 1-Gigabit (Gb) Spin-transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) device.

Everspin's STT-MRAM devices allow enterprise infrastructure and data center providers to increase the reliability and performance of systems where low latency data persistence is critical. This is achieved by delivering protection against power loss and allowing storage OEMs to improve quality of service of their products. Similar benefits can also be achieved using the 1Gb STT-MRAM device as a persistent data write buffer in storage and fabric accelerators, computational storage, and other applications.

The Data Center OEM name is not being disclosed as they have not yet announced their end product(s).

For more information, please visit www.everspin.com

About the Author

Tiera Oliver, edtorial intern for Embedded Computing Design, is responsible for web content edits as well as newsletter updates. She also assists in news content as far as constructing and editing stories. Before interning for ECD, Tiera had recently graduated from Northern Arizona University where she received her B.A. in journalism and political science and worked as a news reporter for the university's student led newspaper, The Lumberjack.

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