Everspin Technologies Inc., a developer and manufacturer of Magnetoresistive RAM (MRAM), announced receiving the qualification notice from an OEM server of its 1-Gigabit (Gb) Spin-transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) device.
Everspin's STT-MRAM devices allow enterprise infrastructure and data center providers to increase the reliability and performance of systems where low latency data persistence is critical. This is achieved by delivering protection against power loss and allowing storage OEMs to improve quality of service of their products. Similar benefits can also be achieved using the 1Gb STT-MRAM device as a persistent data write buffer in storage and fabric accelerators, computational storage, and other applications.
The Data Center OEM name is not being disclosed as they have not yet announced their end product(s).
For more information, please visit www.everspin.com
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