Everspin Technologies has entered pilot production with the first 28 nm 1 GB Spin-Torque Transfer Magnetoresistive (STT-MRAM) component. The 1 Gb STT-MRAM devices will be available with 8- or 16-bit DDR4-compatible interfaces and designed into a JEDEC-compliant BGA package.
STT-MRAM provides protection against power loss, even without supercapacitors or batteries, making it a popular for systems that require high levels of data reliability and persistence. Everspin is in volume production of 256 Mb STT-MRAM components, but the upgraded devices offer more effective management of I/O streams in addition to greater density, more effective management of I/O streams.
Volume production of the 1 GB STT-MRAM devices is expected to begin in Q319.
For more information visit www.everspin.com/spin-transfer-torque-mram-technology.
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