Everspin 1 Gb STT-MRAM with DDR4 Interfaces Now in Pilot Production

June 13, 2019 Brandon Lewis

Everspin Technologies has entered pilot production with the first 28 nm 1 GB Spin-Torque Transfer Magnetoresistive (STT-MRAM) component. The 1 Gb STT-MRAM devices will be available with 8- or 16-bit DDR4-compatible interfaces and designed into a JEDEC-compliant BGA package.

STT-MRAM provides protection against power loss, even without supercapacitors or batteries, making it a popular for systems that require high levels of data reliability and persistence. Everspin is in volume production of 256 Mb STT-MRAM components, but the upgraded devices offer more effective management of I/O streams in addition to greater density, more effective management of I/O streams.

Volume production of the 1 GB STT-MRAM devices is expected to begin in Q319.

For more information visit www.everspin.com/spin-transfer-torque-mram-technology.

About the Author

Brandon Lewis

Brandon Lewis, Editor-in-Chief of Embedded Computing Design, is responsible for guiding the property's content strategy, editorial direction, and engineering community engagement, which includes IoT Design, Automotive Embedded Systems, the Power Page, Industrial AI & Machine Learning, and other publications. As an experienced technical journalist, editor, and reporter with an aptitude for identifying key technologies, products, and market trends in the embedded technology sector, he enjoys covering topics that range from development kits and tools to cyber security and technology business models. Brandon received a BA in English Literature from Arizona State University, where he graduated cum laude. He can be reached by email at brandon.lewis@opensysmedia.com.

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