MagnaChip Semiconductor Corporation will now offer Foundry customers a 0.18 micron BCD (Bipolar-CMOS-DMOS) 200V high-voltage process that uses SOI (Silicon On Insulator) substrates with solid high-voltage isolation and extends MagnaChip’s existing BCD processes from 100V to 200V.
Combining SOI substrates with MagnaChip’s proprietary deep-trench isolation technology provides higher isolation breakdown voltage, smaller isolation size, better substrate noise immunity, latch-up immunity and high-side isolation of power blocks with an insulating silicon dioxide layer between active silicon layers and substrates.
The new 0.18 micron 200V BCD process supports many option devices to enhance design integration and flexibility including high performance bipolar transistors, Zener diode, Schottky diode, high resistance poly resistor, metal-insulator-metal capacitor, metal-oxide-metal capacitor, electrical fuse and multi-time programmable memory.
The automotive industry, especially in the case of electric vehicles and hybrid cars, requires power ICs to be capable of achieving high-temperature reliability and high operation voltages. MagnaChip satisfies this requirement, as the new 200V BCD technology was qualified based on the automotive-grade-qualification specification of AEC-Q100 with Grade0 temperature condition between -40° to 150 °C.
“We are very pleased to offer our 0.18 micron 200V BCD process solution for attractive applications including electric vehicles and solar panels," said YJ Kim, MagnaChip’s CEO. “Our goal is to continue to increase our power technology portfolio to meet the demanding requirements of our Foundry customers in various markets.”
For more information, please visit www.magnachip.com.