GaN Systems Pushes the Envelope With its Latest High-Current GaN Power Transistor

It shouldn't come as much of a surprise that GaN Systems, one of the leader in GaN power semiconductors, released a Gallium-Nitride power transistor, the GS-065-120-1-D. It’s a 120-A, 650-V GaN E-HEMT device. Such a part is suited for high-power applications like automotive, industrial, and renewable energy.

The new power transistor increases the power density to 500 kW, needed for power conversion systems, including automotive traction inverters, very high power on-board chargers (OBC), large-scale energy storage systems, and industrial motor drives. This transistor, with twice the current capability of the company’s previous part, lets designers effectively double the power processing for the same volume. GaN Systems claims that it’s the lowest R_DS(on), highest current 650-V GaN HEMT available today.

The GS-065-120-1-D is sold as a die to customers building modules. Hence, it can be used in half-bridge, full-bridge, and six pack module topologies.

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Richard Nass is the Executive Vice-President of OpenSystems Media. His key responsibilities include setting the direction for all aspects of OpenSystems Media’s Embedded and IoT product portfolios, including web sites, e-newsletters, print and digital magazines, and various other digital and print activities. He was instrumental in developing the company's on-line educational portal, Embedded University. Previously, Nass was the Brand Director for UBM’s award-winning Design News property. Prior to that, he led the content team for UBM Canon’s Medical Devices Group, as well all custom properties and events in the U.S., Europe, and Asia. Nass has been in the engineering OEM industry for more than 25 years. In prior stints, he led the Content Team at EE Times, handling the Embedded and Custom groups and the TechOnline DesignLine network of design engineering web sites. Nass holds a BSEE degree from the New Jersey Institute of Technology.

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