Vishay released the Siliconix SiZ240DT, a 40 V n-channel MOSFET half bridge power stage. It integrates high side and low side MOSFETs in a compact PowerPAIR 3.3mm x 3.3mm package, providing on-resistance and on-resistance times gate charge.
The two TrenchFET® MOSFETs in the SiZ240DT are internally connected in a half-bridge configuration. Its Channel 1 MOSFET provides on-resistance of 8.05 mΩ at 10 V and 12.25 mΩ at 4.5 V. The Channel 2 MOSFET features on-resistance of 8.41 mΩ at 10 V and 13.30 mΩ at 4.5 V.
It provides designers with half-bridge power stages for synchronous buck DC/DC converters, wireless chargers, and switch-mode power supplies in telecom equipment and servers.
It additionally features a wire-free internal construction, minimizing parasitic inductance to allow for high frequency switching. The Qgd / Qgs ratio reduces noise to enhance switching characteristics.
For more information, visit http://www.vishay.com/.
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