MagnaChip’s Second Generation 0.13-micron Embedded Flash Technology Now Available

May 30, 2019 Laura Dolan

SEOUL, SOUTH KOREA and SAN JOSE, CA. MagnaChip Semiconductor Corporation released its second generation 0.13-micron eFlash (Embedded Flash) technology with 20V and 30V high-voltage options. It is designed to meet the demands for multi-function hybrid mixed-signal products, such as touch ICs, fingerprint readout ICs and wireless power charger ICs.

The second generation 0.13-micron eFlash provides different customized IPs up to 64Kbytes, as the hybrid process maintains the original eFlash features despite the addition of the high voltage option.

Customers may now choose either 20V or 30V with the added option of selecting IPs including SRAM, PLL analog IPs, high density standard cell libraries and high voltage IO libraries. It also offers a fully isolated high-voltage capability for the output driver to endure negative voltage, enabling higher design flexibility.

"The second generation 0.13-micron eFlash with high-voltage technology is highly desirable for products requiring both memory and high-voltage, such as wireless power charger ICs, large panel touch ICs and fingerprint ICs," said MagnaChip’s CEO, YJ Kim. "MagnaChip will continue to develop new hybrid technologies to enable our customers to design various products and to stay competitive in the market."

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