X-FAB Launches High-Voltage Galvanic Isolation Process Technology

January 30, 2019 Alix Paultre

X-FAB Silicon Foundries announced the full-volume production release of its new high-temperature galvanic isolation semiconductor process. This proprietary technology is fully automotive qualified and offers high levels of reliability.

Key advantages of the new X-FAB galvanic isolation process include:
•       Operational temperatures of up to 175°C
•       Successfully tested up to 6,000 Vrms @ 50 Hz and 10,000 VDC
•       Uninterrupted barrier layer with 0 ppm residual contamination
•       Demonstrated conformance with latest IEC 60747-17 semiconductor coupler draft standard
•       Support for working voltages up to 1.7 kV

X-FAB offers two types of packaged galvanic isolation devices for customer evaluation. The capacitive coupler test chip, G3-C1, has an isolation layer thickness of 11 µm and was tested to withstand up to 6,000 Vrms (the maximum limit of the test setup). An inductive coupler test chip, G3-T06, is also available for customer evaluation and has an isolation layer thickness of 14 µm.

Design kits for all major EDA platforms can be downloaded from X-FAB’s customer web portal. Samples and full process qualification reports are available on request.

For more information visit www.xfab.com.

Previous Article
PikeOS Hypervisor certified according to Common Criteria

SYSGO has reached another great milestone with PikeOS. As the first and as of today the only RTOS vendor, t...

Next Article
Germany Ups Its Stake in E-Mobility

Germany is also known for its technical innovation and early adoption of technology. Their automotive indus...