 | | The RF3928B is a matched GaN transistor in a hermetic, flanged ceramic package. |
| The RF6555 provides a single balanced TDD access for Rx and Tx paths along with two ports on the output for connecting a diversity solution or a test port. |
| The prestigious award was accepted by RFMD’s president and CEO, Bob Bruggeworth, at an awards ceremony held earlier today in Shenzhen, China. Mr. Bruggeworth commented following the ceremony, |
| RFMD's high-power GaN broadband power transistors (BPTs) are optimized for commercial infrastructure, military communications, and general purpose amplifier applications in the 700MHz to 2.2GHz frequency band. They are ideal for constant envelope, pulsed, WCDMA, and LTE applications. |
| RFMD’s RF6575 Front End Module (FEM) Featured In Atmel 128RFA1 Reference Design |
| Multiband front end for mobile devices |
| RFMD’s WiFi FEMs Address Wide Range of High-Performance Applications And Target Explosive Growth In WiFi End Markets |
| RFMD’s RF3482 Front End Module Featured In Select Smartphones And Tablets Equipped With The WiLink(tm) Platform From Texas Instruments |
| four newly introduced products – the RF8889A, the RF1291, the RF1194A, and the RF1196 – are each optimized to solve the complex RF requirements of 3G/4G smartphones related to high band count and harmonics |
| RFMD’s PowerSmart(tm) Power Platforms And WiFi Front End Modules Support Next-Generation Samsung 3G/4G Devices |
| PowerSmart(tm) And WiFi Design Wins Secured In Multiple Devices, Including World’s First Full 3D Smartphone |
| A broadly applicable power amplifier IC featuring a powerful combination of industry-leading RF performance and best-in-class product size and ease-of-use |
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