Qorvo has expanded its offerings for 5G applications with 28 GHz Gallium Nitride on Silicon Carbide (GaN-on-SiC) front-end modules (FEMs). These new FEMs reduce overall system cost for base station equipment manufacturers as they expand into 5G. According to SNS Telecom & IT, the 28 GHz frequency band is widely preferred for early 5G-based fixed wireless access deployments. The market for fixed wireless 5G services is further expected to grow at a CAGR of approximately 84% between 2019 and 2025, eventually accounting for more than $40 billion.
Qorvo’s new GaN FEMs enable smaller, more powerful, and efficient millimeter-wave, phased array systems, which will steer signals to areas of greatest congestion. Using Qorvo’s 0.15-micron GaN-on-SiC technology in this application translates into a more than 90 percent reduction in the number of elements required over silicon germanium technology – from 1,024 to just 64 for an effective isotropic radiated power (EIRP) of 65 dBm.
The Qorvo single-channel QPF4001 and dual-channel QPF4002 GaN FEMs have small footprints that integrate up to two multi-function GaN monolithic microwave integrated circuits (MMICs) in a single package. Each MMIC die combines a three-stage low-noise amplifier, a three-stage power amplifier, and a low-loss transmit/receive (T/R) switch.
Engineering samples of the QPF4001 and QPF4002 FEMs will be available to qualified customers at the end of this month.