ROHM and GaN Systems join forces for GaN power semiconductors

June 7, 2018 Jamie Leland

ROHM and GaN Systems are collaborating in the gallium nitride (GaN) power semiconductor business, with the goal of contributing to the continuing evolution of power electronics. The companies have agreed to jointly develop form-, fit-, and function-compatible products using GaN semiconductor dies in both GaN Systems’ GaNPX packaging and ROHM’s traditional power semiconductor packaging. GaN Systems and ROHM will also work together on GaN semiconductor research and development activities to propose solutions for the industrial, automotive, and consumer electronics fields. And to contribute to greater energy savings and increased power densities in the power electronics market, both companies will continue to collaborate to expand their line-up of GaN products and broaden the range of choices.


Previous Article
Marketer’s guide to Sensors Expo 2018
Marketer’s guide to Sensors Expo 2018

Your guide to increasing exposure, driving leads, booth traffic and outshining your competitors at Sensors ...

Next Article
Asine delivers rugged 1TB M.2 Flash disk
Asine delivers rugged 1TB M.2 Flash disk

M.2 NVMe PCIe pSLC/MLC SSD is ideal for demanding embedded applications.


Stay updated on industrial topics with the Industrial edition of our Embedded Daily newsletter

Subscribed! Look for 1st copy soon.
Error - something went wrong!