ROHM and GaN Systems join forces for GaN power semiconductors

June 7, 2018 Jamie Leland

ROHM and GaN Systems are collaborating in the gallium nitride (GaN) power semiconductor business, with the goal of contributing to the continuing evolution of power electronics. The companies have agreed to jointly develop form-, fit-, and function-compatible products using GaN semiconductor dies in both GaN Systems’ GaNPX packaging and ROHM’s traditional power semiconductor packaging. GaN Systems and ROHM will also work together on GaN semiconductor research and development activities to propose solutions for the industrial, automotive, and consumer electronics fields. And to contribute to greater energy savings and increased power densities in the power electronics market, both companies will continue to collaborate to expand their line-up of GaN products and broaden the range of choices.

 

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